CMDSH-3
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT SILICON
SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-3 is a
silicon Schottky diode, manufactured in an SOD-323
surface mount package, designed for fast switching
applications requiring a low forward voltage drop.
MARKING CODE: S1
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Average Forward Current
IO
30
UNITS
V
100
mA
Peak Forward Surge Current, tp=10ms
750
mA
250
mW
Power Dissipation
Power Dissipation (TL=25°C)
Operating and Storage Junction Temperature
IFSM
PD
833
mW
-65 to +150
°C
Thermal Resistance
PD
TJ, Tstg
ΘJA
500
°C/W
Thermal Resistance
ΘJL
150
°C/W
ELECTRICAL
SYMBOL
IR
BVR
CHARACTERISTICS: (TA=25°C)
TEST CONDITIONS
VR=25V
VF
IF=100μA
IF=2.0mA
VF
MIN
TYP
MAX
1.0
30
UNITS
μA
V
0.29
V
IF=15mA
0.37
V
VF
IF=50mA
0.44
0.55
VF
IF=100mA
0.51
0.80
CJ
VR=1.0V, f=1.0MHz
7.0
V
V
pF
R9 (11-February 2016)
CMDSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: S1
R9 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
CMDSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R9 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
CMDSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R9 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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w w w. c e n t r a l s e m i . c o m
(001)
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